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IRF540N (TO-220-3) MOSFET (Pack Of 2 ICs)


  1. Drain to source voltage Vds is 100V
  2. Gate to source voltage is ±20V
  3. On Resistance Rds(on) of 44mohm at Vgs of 10V
  4. Power dissipation Pd of 130W at 25°C

69.00 79.00

The IRF540N (TO-220-3) MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in wide variety of applications.


Package Includes:

1 x IRF540N (TO-220-3) MOSFET (Pack Of 2 ICs)

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